View T1G6000528-Q3_4842561.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

C 1 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? availablefpackage applications ? wideband and narrowband defense and commercial communication systems general purpose rf power C jammers C radar C professional radio systems C wimax C wideband amplifers C test instrumentation C cellular infrastructure C productffeatures ? frequency: dc to 6 ghz ? linear gain: >10 db at 6 ghz ? operating voltage: 28 v ? output power (p 3db ): >7 w at 6 ghz ? lead-free and rohs compliant ? low thermal resistance package generalfdescription the triquint T1G6000528-Q3 is a 7 w (p 3db ) discrete gan on sic hemt which operates from dc to 6 ghz and typically provides >10 db gain at 6 ghz. the device is constructed with triquints proven 0.25 m production process, which features advanced feld plate techniques to optimize power and ef- ciency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifer line-ups and lower thermal management costs. packagefinformation packageftype description base q3 5.0mm x 4.0mm ceramic air cavity straight lead package cumo orderingfinformation materialfno. partfno. description eccn 1075579 T1G6000528-Q3 packaged part ear99 1081733 T1G6000528-Q3- evb3 narrowband 3.0 to 3.5 ghz evaluation board ear99
C 2 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? specifcations sym parameter value v + positive supply value 2 28 v - negative supply voltage range - 10 v to 0 v i positive supply current 2 0.8 a |i g | gate supply current 12.5 ma p d power dissipation 2 10 w t ch operating channel temperature 2 200c notes: 1 absolute maximum ratings at 3 ghz 2 absolute maximum ratings are set based on industry recommended standard mean time to failure (mttf) greater than 1m hours while operating at a maximum case temperature of 85c . operating at lower maximum case temperatures allows maximum operating voltage to be increased up to a maximum of 40v. application specifc limits can be determined with engineering guidance from triquint. absolute maximum ratings 1 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 1.e+14 1.e+15 i an lifetime, tm (hours) median lifetime (tm) vs. channel temperature (tch) 1.e+04 1.e+05 1.e+06 1.e+07 25 50 75 100 125 150 175 200 225 250 275 med i channel temperature, tch (c) fet7 median lifetime (tm) vs. channel temperature (tch) median lifetime, tm (hours) channel temperature, tch ( c)
C 3 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? testfconditions t ch f(c) ? jcf ( c/w) 1 dc at 85c case 199 11.2 notes: 1 thermal resistance (channel to backside of case) thermal information specifcations 60 80 100 120 140 160 180 n el temperature (degc) T1G6000528-Q3 max channel temperture vs pulse width (tbase = 85 c, pdiss = 3 w/mm) 0 20 40 60 80 100 120 140 160 180 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 1.00e+00 maximum channel temperature (degc) pulse width (sec) T1G6000528-Q3 max channel temperture vs pulse width (tbase = 85 c, pdiss = 3 w/mm) 5% duty cycle 25% duty cycle 50% duty cycle T1G6000528-Q3fmaxfchannelftemperaturefvsfpulsefwidth (tbasef=f85 fc,fpdissf=f3fw/mm) maximumfchannelftemperaturef(degc) pulsefwidthf(sec)
C 4 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? electricalfspecifcations characteristics symbol min typ maxf unit conditions break-down voltage drain source bv dsx 85 120 v v gs = -8 v; i d =1 ma gate quiescent voltage v gs (q) -3.9 v v ds =28 v; i dq =100 ma gate threshold voltage v gs (th) -4.5 v v ds =10 v; i d =5 ma saturated drain current i dsx 2 a v ds =5 v; v gs =0 v characteristics symbol min typ maxf unit loadfpullfperformancefatf6.0fghzf(v ds f=f28fv,fi dq f=f50fma,fcw) ff f f f linear gain g lin 13.0 13.5 db output power at 3 db gain compression p 3db 8.0 10.0 w drain efciency at 3 db gain compression de 3db 55 65 % power-added efciency at 3 db gain compression pae 3db 50 55 % gain at 3 db compression g 3db 10.0 10.5 db performancefatf3.3fghzfinfthef3.0ftof3.5fghzffixturef(vdsf=f28fv,fidqf=f50fma,f200msecfpulse,f20%fduty-cycle) f f linear gain g lin 15.5 16.9 db output power at 3 db gain compression p 3db 8.9 11.0 w drain efciency at 3 db gain compression de 3db 55 58 % power-added efciency at 3 db gain compression pae 3db 50 53 % gain at 3 db compression g 3db 12.5 13.9 db narrowbandfperformancefatf3.5fghzf(vdsf=f28fv,fidqf=f50fma,fcwfatfp1db,fappliedfforf3.5fsecs) impedance mismatch ruggedness vswr 10:1 recommended operating conditions apply unless otherwise specifed: t a =25 c dc characteristics rf characteristics
C 5 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? devicefcharacterizationfdata T1G6000528-Q3 v ds =28v, i dq =50 ma maximum stable gain of T1G6000528-Q3 v ds =28v, i dq =50 ma s-parameter smith chart small-signal gain 2 5 10 20 50 j2 ?j2 0 j5 ?j5 0 j10 ?j10 0 j20 ?j20 0 j50 ?j50 0 6000mhz 6000mhz 100mhz s11 s22 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 35 gmax vs. frequency frequency (mhz) gain (db) max stable gain the data was taken in a package fxture. the reference planes are at the package interface.
C 6 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? freq.f[ghz] realfs11 imagfs11 realfs21 imagfs21 realfs12 imagfs12 realfs22 imagfs22 0.1 0.892 -0.182 -14.955 4.241 0.005 0.005 0.440 -0.285 0.2 0.726 -0.593 -12.756 7.176 0.008 0.011 0.361 -0.316 0.3 0.438 -0.840 -10.636 9.084 0.012 0.015 0.294 -0.342 0.4 0.127 -0.926 -8.639 10.186 0.016 0.017 0.236 -0.362 0.5 -0.058 -0.910 -6.798 10.673 0.020 0.018 0.187 -0.379 0.6 -0.178 -0.894 -5.134 10.700 0.024 0.017 0.144 -0.391 0.7 -0.276 -0.856 -3.659 10.398 0.028 0.015 0.106 -0.401 0.8 -0.349 -0.817 -2.377 9.874 0.031 0.013 0.072 -0.409 0.9 -0.444 -0.777 -1.287 9.214 0.034 0.011 0.040 -0.415 1.0 -0.521 -0.726 -0.381 8.485 0.036 0.008 0.008 -0.422 1.1 -0.589 -0.669 0.353 7.737 0.037 0.006 -0.025 -0.428 1.2 -0.637 -0.608 0.929 7.010 0.038 0.004 -0.059 -0.435 1.3 -0.681 -0.558 1.365 6.329 0.038 0.002 -0.091 -0.441 1.4 -0.719 -0.501 1.677 5.712 0.037 0.000 -0.122 -0.447 1.5 -0.747 -0.452 1.886 5.168 0.037 -0.001 -0.149 -0.451 1.6 -0.769 -0.411 2.009 4.701 0.035 -0.002 -0.173 -0.454 1.7 -0.786 -0.375 2.066 4.309 0.034 -0.003 -0.194 -0.455 1.8 -0.799 -0.344 2.074 3.986 0.033 -0.004 -0.213 -0.454 1.9 -0.810 -0.315 2.049 3.724 0.031 -0.005 -0.231 -0.451 2.0 -0.818 -0.289 2.006 3.515 0.030 -0.005 -0.249 -0.446 2.1 -0.826 -0.263 1.958 3.348 0.028 -0.005 -0.268 -0.439 2.2 -0.833 -0.238 1.915 3.213 0.027 -0.006 -0.287 -0.431 2.3 -0.839 -0.214 1.886 3.099 0.026 -0.006 -0.306 -0.422 2.4 -0.844 -0.190 1.878 2.997 0.026 -0.006 -0.323 -0.412 2.5 -0.849 -0.166 1.895 2.899 0.025 -0.007 -0.339 -0.402 2.6 -0.853 -0.143 1.940 2.798 0.025 -0.007 -0.352 -0.393 2.7 -0.856 -0.119 2.012 2.689 0.025 -0.007 -0.363 -0.384 2.8 -0.858 -0.094 2.110 2.568 0.025 -0.007 -0.372 -0.377 2.9 -0.859 -0.067 2.231 2.432 0.026 -0.008 -0.380 -0.370 3.0 -0.858 -0.038 2.370 2.282 0.026 -0.008 -0.389 -0.364 3.1 -0.857 -0.006 2.522 2.118 0.027 -0.008 -0.397 -0.359 3.2 -0.854 0.028 2.678 1.941 0.028 -0.009 -0.406 -0.354 3.3 -0.850 0.063 2.832 1.755 0.029 -0.009 -0.414 -0.349 3.4 -0.845 0.098 2.974 1.564 0.030 -0.009 -0.424 -0.344 3.5 -0.839 0.132 3.097 1.371 0.030 -0.009 -0.433 -0.339 3.6 -0.833 0.165 3.193 1.182 0.031 -0.009 -0.443 -0.332 3.7 -0.825 0.196 3.252 1.002 0.031 -0.009 -0.453 -0.324 3.8 -0.817 0.226 3.268 0.835 0.031 -0.008 -0.463 -0.315 3.9 -0.809 0.253 3.234 0.685 0.030 -0.008 -0.472 -0.303 4.0 -0.800 0.278 3.145 0.555 0.029 -0.007 -0.481 -0.290 4.1 -0.790 0.300 2.998 0.449 0.028 -0.007 -0.490 -0.273 4.2 -0.780 0.321 2.798 0.370 0.026 -0.006 -0.498 -0.255 4.3 -0.770 0.341 2.800 0.349 0.023 -0.005 -0.506 -0.237 4.4 -0.759 0.360 2.798 0.363 0.020 -0.004 -0.513 -0.218 4.5 -0.746 0.379 2.789 0.430 0.016 -0.003 -0.520 -0.201 4.6 -0.733 0.400 2.759 0.590 0.012 -0.002 -0.527 -0.186 4.7 -0.720 0.421 2.652 0.962 0.008 -0.001 -0.534 -0.172 4.8 -0.706 0.443 2.054 1.934 0.003 0.000 -0.540 -0.160 4.9 -0.693 0.464 -0.806 2.704 -0.002 0.001 -0.547 -0.150 5.0 -0.681 0.486 -2.262 1.685 -0.007 0.002 -0.553 -0.139 5.1 -0.671 0.507 -2.554 1.198 -0.012 0.002 -0.559 -0.130 5.2 -0.657 0.528 -2.647 0.975 -0.018 0.003 -0.565 -0.120 5.3 -0.638 0.551 -2.687 0.860 -0.022 0.003 -0.571 -0.111 5.4 -0.609 0.576 -2.703 0.805 -0.027 0.003 -0.577 -0.101 5.5 -0.566 0.605 -2.705 0.798 -0.031 0.002 -0.582 -0.092 5.6 -0.512 0.634 -2.692 0.842 -0.033 0.002 -0.588 -0.082 5.7 -0.464 0.657 -2.653 0.957 -0.035 0.002 -0.593 -0.072 5.8 -0.389 0.687 -2.562 1.184 -0.036 0.003 -0.597 -0.061 5.9 -0.295 0.709 -2.203 1.485 -0.035 0.003 -0.601 -0.049 6.0 -0.168 0.688 -1.649 1.944 -0.032 0.005 -0.605 -0.037 s-parameter data (v ds = 28 v, i dq = 50 ma) the data was taken in a package fxture. the reference planes are at the package interface.
C 7 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? devicefcharacterizationfdata load-pull data test conditions: v dd = 28 v, i dq = 50 ma, test signal = cw 5 12.5 25 50 125 j5 ?j5 0 j12.5 ?j12.5 0 j25 ?j25 0 j50 ?j50 0 j125 ?j125 0 500 mhz 500 mhz 500 mhz 500 mhz 6000 mhz 6000 mhz 6000 mhz 6000 mhz z l eff z l pwr z l cmp z s
C 8 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? freq.f[mhz] real(zs) imag(zs) real(zl) imag(zl) g3dbf[db] p3dbf[dbm] p3dbf[w] paef@3db[%] 500 5.00 86.68 26.11 1.23 17.8 38.8 7.6 54.0 600 5.00 80.16 25.94 1.34 17.9 38.9 7.7 54.4 700 5.00 72.72 25.77 1.47 17.9 38.9 7.8 54.8 800 5.00 65.74 25.62 1.59 18.0 39.0 7.9 55.2 900 5.00 59.41 25.46 1.73 18.0 39.0 8.0 55.6 1000 5.00 53.61 25.31 1.87 18.1 39.1 8.1 56.0 1100 5.00 48.21 25.16 2.01 18.1 39.3 8.6 57.4 1200 5.00 43.15 25.01 2.15 18.2 39.6 9.1 58.8 1300 5.00 38.42 24.86 2.29 18.2 39.8 9.6 60.2 1400 5.00 34.02 24.71 2.43 18.3 40.1 10.1 61.6 1500 5.00 29.98 24.55 2.57 18.3 40.3 10.7 63.0 1600 5.00 26.32 24.40 2.71 18.3 40.5 11.3 64.4 1700 5.00 23.05 24.23 2.84 18.4 40.8 12.0 65.8 1800 5.00 20.16 24.06 2.97 18.4 41.0 12.6 67.2 1900 5.00 17.62 23.89 3.09 18.5 41.3 13.4 68.6 2000 5.00 15.40 23.71 3.20 18.5 41.5 14.1 70.0 2100 5.00 13.46 23.52 3.31 18.2 41.5 14.0 68.6 2200 5.00 11.77 23.32 3.40 17.8 41.4 13.8 67.2 2300 5.00 10.29 23.11 3.49 17.5 41.4 13.6 65.8 2400 5.00 8.97 22.90 3.56 17.1 41.3 13.5 64.4 2500 5.00 7.78 22.67 3.62 16.8 41.3 13.3 63.0 2600 5.00 6.66 22.43 3.68 16.4 41.2 13.2 61.6 2700 5.00 5.60 22.18 3.73 16.1 41.2 13.0 60.2 2800 5.00 4.56 21.93 3.77 15.7 41.1 12.9 58.8 2900 5.00 3.55 21.66 3.81 15.4 41.1 12.7 57.4 3000 5.00 2.54 21.38 3.85 15.0 41.0 12.6 56.0 3100 5.00 1.55 21.09 3.88 14.9 41.0 12.5 56.6 3200 5.00 0.59 20.79 3.92 14.8 41.0 12.5 57.2 3300 5.00 -0.33 20.48 3.97 14.8 40.9 12.4 57.8 3400 5.00 -1.20 20.16 4.01 14.7 40.9 12.4 58.4 3500 5.00 -2.03 19.84 4.04 14.6 40.9 12.3 59.0 3600 5.00 -2.80 19.52 4.06 14.5 40.9 12.2 59.6 3700 5.00 -3.53 19.20 4.05 14.4 40.9 12.2 60.2 3800 5.00 -4.23 18.89 4.00 14.4 40.8 12.1 60.8 3900 5.00 -4.89 18.60 3.93 14.3 40.8 12.1 61.4 4000 5.00 -5.52 18.32 3.80 14.2 40.8 12.0 62.0 4100 5.00 -6.14 18.06 3.63 14.0 40.8 11.9 62.0 4200 5.00 -6.74 17.82 3.40 13.9 40.7 11.8 62.0 4300 5.00 -7.33 17.60 3.11 13.7 40.7 11.7 62.0 4400 5.00 -7.93 17.40 2.77 13.6 40.6 11.6 62.0 4500 5.00 -8.52 17.23 2.38 13.4 40.6 11.5 62.0 4600 5.00 -9.11 17.07 1.95 13.2 40.6 11.4 62.0 4700 5.00 -9.73 16.93 1.48 13.1 40.5 11.3 62.0 4800 5.00 -10.36 16.82 0.97 12.9 40.5 11.2 62.0 4900 5.00 -11.03 16.71 0.43 12.8 40.4 11.1 62.0 5000 5.00 -11.75 16.63 -0.14 12.6 40.4 11.0 62.0 5100 5.00 -12.54 16.57 -0.73 12.5 40.4 11.0 61.7 5200 5.00 -13.41 16.52 -1.36 12.4 40.4 11.0 61.4 5300 5.00 -14.39 16.49 -2.00 12.3 40.4 11.0 61.1 5400 5.00 -15.52 16.48 -2.67 12.2 40.4 11.0 60.8 5500 5.00 -16.84 16.50 -3.36 12.1 40.4 11.0 60.5 5600 5.00 -18.43 16.53 -4.08 11.9 40.4 11.0 60.2 5700 5.00 -20.37 16.59 -4.82 11.8 40.4 11.0 59.9 5800 5.00 -22.78 16.68 -5.58 11.7 40.4 11.0 59.6 5900 5.00 -25.88 16.80 -6.37 11.6 40.4 11.0 59.3 6000 5.00 -29.97 16.95 -7.19 11.5 40.4 11.0 59.0 load-pull data rf performance that the device typically exhibits when placed in the specifed impedance environment. the impedances are not the impedances of the device, they are the impedances presented to the device via an rf circuit or load-pull system. the impedances listed follow an optimized trajectory to maintain high power and high efciency (zlcmp). test conditions: v ds =28v, i dq = 50ma
C 9 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? typicalfperformance:fgain,fefciencyfandfoutputfpower 26 28 30 32 34 36 38 40 42 12 13 14 15 16 17 18 19 20 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] gain, deff., and pae vs. pout freq = 3ghz; vds = 28v, idq = 50ma; cw gain deff. pae z s = 2.72 + j0.10 ? z l = 23.14 + j0.58 ? 26 28 30 32 34 36 38 40 42 12 13 14 15 16 17 18 19 20 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] gain, deff., and pae vs. pout freq = 4ghz; vds = 28v, idq = 50ma; cw gain deff. pae z s = 2.16 ? j6.47 ? z l = 18.02 + j6.49 ? 26 28 30 32 34 36 38 40 42 10 11 12 13 14 15 16 17 18 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] gain, deff., and pae vs. pout freq = 5ghz; vds = 28v, idq = 50ma; cw gain deff. pae z s = 2.77 ? j11.01 ? z l = 13.85 + j1.40 ? 26 28 30 32 34 36 38 40 42 8 9 10 11 12 13 14 15 16 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] gain, deff., and pae vs. pout freq = 6ghz; vds = 28v, idq = 50ma; cw gain deff. pae z s = 12.99 ? j30.90 ? z l = 18.88 ? j8.87 ? performance is measured at dut reference plane gainfdef.,fandfpaefvs.fpout f freq.f=f3ghz;fv ds f=f28v,fi dq f=f50fma;fcw gainfdef.,fandfpaefvs.fpout f freq.f=f5ghz;fv ds f=f28v,fi dq f=f50fma;fcw gainfdef.,fandfpaefvs.fpout f freq.f=f4ghz;fv ds f=f28v,fi dq f=f50fma;fcw gainfdef.,fandfpaefvs.fpout f freq.f=f6ghz;fv ds f=f28v,fi dq f=f50fma;fcw
C 10 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? performancefoverftemperature:fgain,fefciencyfandfoutputfpower gainfvs.ftemperature 3300fmhz,f28v,f50fma;fcwfp 3db fcompression powerfvs.ftemperature 3300fmhz,f28v,f50fma;fcwfp 3db fcompression drainfefciencyfvs.ftemperature 3300fmhz,f28v,f50fma;fcwfp 3db fcompression ?40 ?20 0 20 40 60 80 13 13.5 14 14.5 15 15.5 16 temperature (c) gain (db) gain vs. temperature, 3300 mhz, 28 v, 50 ma, cw p3db compression ?40 ?20 0 20 40 60 80 60 61 62 63 64 65 66 67 68 69 70 temperature (c) draineff. (%) drain efficiency vs. temperature, 3300 mhz, 28 v, 50 ma, cw p3db compression ?40 ?20 0 20 40 60 80 12 12.2 12.4 12.6 12.8 13 13.2 13.4 13.6 13.8 14 temperature (c) power (w) power vs. temperature, 3300 mhz, 28 v, 50 ma, cw p3db compression
C 11 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? evaluationfboardfperformance:f3.0ftof3.5fghz T1G6000528-Q3fp3dbfcompressionfinfnarrowbandffixture 28v,f50ma;f200secfCf20%fduty-cyclefpulse 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 50 52 54 56 58 60 62 64 66 68 70 t1g6000528?q3 p3db compression in narrow?band fixture 28v, 50ma, 200 sec ? 20% duty?cycle pulse frequency (mhz) drain eff. (%) pae (%) 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 frequency (mhz) t1g6000528?q3 p3db compression in narrow?band fixture 28v, 50ma, 200 sec ? 20% duty?cycle pulse power (w) gain (db) T1G6000528-Q3fp3dbfcompressionfinfnarrowbandffixture 28v,f50ma;f200secfCf20%fduty-cyclefpulse
C 12 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? evaluationfboardfinformation pc board layout: T1G6000528-Q3-evb3, 3.0 to 3.5 ghz bill of materials referencef f desg. value manufacturer partfnumber c1 22 uf sprague t491d c2 1 uf kemet 1812c105kat2a c3 0.1 ug kemet c1206c104krac7800 c4 .01 uf kemet c1206c103krac7800 c5 100 pf atc 100b101 c6 2400 pf dli c08bl242x5unx0b r1 1000 ohm vishay dale crcw08051001f100 r2 12 ohm vishay dale rm73b2b120j l1 9.85 nh coilcraft 16069jlb c7 22 uf sprague t491d c8 1 uf kemet 1812c105kat2a referencef f desg. value manufacturer partfnumber c9 0.1 uf kemet c1206c104krac7800 c10 .01 uf kemet c1206c103krac7800 c11 100 pf atc 100b101 c12 2400 pf dli c08bl242x5unx0b l2 9.85 nh coilcraft 16069jlb c13 27 pf atc 600l270jt200 c14 27 pf atc 600l270jt200 pcb ro3210 rogers r =10.2 h=25 mil imn distributed transmission line input network omn distributed transmission line output network
C 13 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? evaluationfboardfinformationf(continued) pc board schematic: T1G6000528-Q3-evb3, 3.0 to 3.5 ghz bias-upfprocedure bias-downfprocedure set gate voltage (vg) to -5.0 v turn of rf signal set drain voltage (vd) to 28 v turn of vd and wait 1 second to allow drain capacitor(s) to dissipate slowly increase vg until quiescent id is 50 ma. typical vg is -3.9 v turn of vg apply rf signal c1 c2 c3 c4 c5 c6 r2 l1 c7 c8 c9 c10 c11 c12 l2 c13 c14 sma_1 sma_2 r1 1 2 3 "omn" 1 2 3 "imn" d g s 1 2 3 fet1 "t1g6000528_q3" gate drain 50 ohm 50 ohm s d g
C 14 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? mechanicalfinformation package information and dimensions this package is lead-free/rohs-compliant. note: unless specifed otherwise, dimensions are in millimeters gate drain source (fange)
C 15 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? productfcompliancefinformation esd information caution! esd-sensitive device esd rating: 1a value: passes 250 v min. test: human body model (hbm) standard: jedec standard jesd22-a114 msl rating level 3 at +260 c convection refow. the part is rated moisture sensitivity level 3 at 260c per jedec standard ipc/jedec j-std-020. eccn u.s. department of commerce ear99
C 16 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. k 8/11/2011 copyright ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? contactfinformation importantfnotice for the latest specifcations, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the informa - tion contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life- sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

▲Up To Search▲

Price & Availability of T1G6000528-Q3

	To Download T1G6000528-Q3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .